收藏本站
ZXMN3B01F
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
I =250 A, V DS = V GS
Drain-Source   Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
(1)
Resistance
Forward Transconductance (1) (3)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
30
0.7
4
1
100
0.150
0.240
V
A
nA
V
S
I D =250 A, V GS =0V
V DS =30V, V GS =0V
V GS = 12V, V DS =0V
D
V GS =4.5V, I D =1.7A
V GS =2.5V, I D =1.2A
V DS =15V,I D =1.7A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
258
50
30
pF
pF
pF
V DS = 15V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
2.69
3.98
8
5.27
2.93
0.57
0.92
ns
ns
ns
ns
nC
nC
nC
V DD = 15V, V GS = 4.5V
I D = 1A
R G ? 6.0
V DS =15V,V GS = 4.5V,
I D =1.7A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.85
0.95
V
T J =25°C, I S = 1.7A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
10.85
5
ns
NC
T J =25°C, I F = 1.3A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - DECEMBER 2005
SEMICONDUCTORS
4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMN3B04N8TC MOSFET N-CHAN 30V 8SOIC
ZXMN3B14FTA MOSFET N-CHAN 30V 3.5A SOT23-3
ZXMN3F30FHTA MOSFET N-CHAN 30V SOT23-3
ZXMN3F31DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN3G32DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN4A06GTA MOSFET N-CH 40V 5A SOT223
ZXMN4A06KTC MOSFET N-CHAN 40V 10.9A DPAK
ZXMN6A07FTC MOSFET N-CHAN 60V SOT23-3
相关代理商/技术参数
ZXMN3B01FTC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B04N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B04N8TA 功能描述:MOSFET 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B04N8TC 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B14F 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B14F(2) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN3B14F_06 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B14FTA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube